Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
Yerevan State University (YSU)
In recent years the thermoelectric properties of materials (specifically solid solutions on the basis of lead [1, 2]), in which conduction band (in the case of n-type semiconductor) or valence band (in the case of p-type semiconductor) has a two-valley structure are often investigated. During the analyses of experimental findings of thermoelectric properties it is very important to have the value of parameter -index of power in the dependence of the free path on the energy, which we’ll briefly denominate spreading parameter.
oai:arar.sci.am:23184
ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան
Dec 13, 2023
Feb 27, 2020
22
https://arar.sci.am/publication/25885
Հրատարակութեան անունը | Թուական |
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DETERMINATION OF SPREADING PARAMETER IN MULTI-VALLEY SEMICONDUCTORS | Dec 13, 2023 |