Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Date of publication:

2008

Volume:

1

Number:

1

ISSN:

1829-1171

Official URL:

Corporate Creators:

Aachen University of Applied Sciences, Jülich Campus, Institute of Nano- and Biotechnologies (INB), Ginsterweg 1, 52428 Jülich, Germany ; Research Centre Jülich, Institute of Bio- and Nanosystems (IBN-2), 52428 Jülich, Germany ; Tohoku University, Department of Electronic Engineering, Aramaki Aza Aoba 6-6-05, Aoba-ku, Sendai, Miyagi 980-8579, Japan

Coverage:

99-103

Abstract:

The light-addressable potentiometric sensor (LAPS) belongs to the class of field-effect-based sensor devices. Derived from early investigations on ion-selective field-effect transistors (ISFETs) [1], researchers first developed the electrolyte-insulator-semiconductor (EIS) capacitance to investigate the complex electrochemical- and surface mechanisms of the ISFET-gate region [2-4] . This was a consequential step, and followed the same way as the traditional development of MOSFETs (metal-oxide semiconductor field-effect transistor) and MOS (metal-oxide semiconductor) capacitances [5-8]. Due to the relatively simple manufacturing process and simple encapsulation, at the same time (bio-) chemical sensor development started to use EIS structures as an individual sensor platform [9-12] .

Table of contents:

Place of publishing:

Digitisation sponsor:

Date created:

2008-04-26

Format:

pdf

Identifier:

oai:arar.sci.am:23174

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան