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Title: GENERATION-RECOMBINATION PHENOMENA IN THIN METAL OXIDES FILMS UNDER THE INFLUENCE OF GAMMA RADIATION
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ECE Dept., University of Limerick, Limerick, Ireland
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Abstract:
Deep understanding of physical properties of the materials under the influence of radiation is vital for the effective design of devices for radiation-sensing applications. Mixing oxides in various proportions was found to control the radiation sensing properties of the semiconductor films in terms of their sensitivity to γ-radiation exposure and working dose region.
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oai:arar.sci.am:23173
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ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան
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Last modified:
May 19, 2021
In our library since:
Feb 27, 2020
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1
All available object's versions:
https://arar.sci.am/publication/25874
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Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
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Armenian Journal of Physics, 2008
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Armenian Journal of Physics, 2008, vol. 1
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Armenian Journal of Physics, 2008, vol. 1, № 1
- ON THE THEORY OF MULTI-PHOTON RESONANT INTERACTION OF STRONG ELECTROMAGNETIC WAVE WITH SEMICONDUCTORS
- SOME PECULIARITIES OF PHOTOREFRACTION IN NEMATIC LIQUID CRYSTALS WITH A SILICON SUBSTRATE
- SOME ELECTRO-OPTICAL CHARACTERISTICS OF SEMICONDUCTOR-LIQUID CRYSTAL INTERFACE
- OPTICAL CONTROL OF THE TERAHERTZ TRANSMISSION OF GaAs-PRISM
- SPECTRAL DEPENDENCE OF THE PHOTOLUMINESCENCE OF CdS1-xSex NANOCRYSTALS EMBEDDED IN SILICATE GLASS
- HEAVY METAL DETECTION WITH SEMICONDUCTOR DEVICES BASED ON PLD-PREPARED CHALCOGENIDE GLASS THIN FILMS
- MANUFACTURE AND INVESTIGATIONS OF ANODIZED TITANIUM OXIDE PHOTOANODES
- DOUBLE-LAYER DIAMOND-LIKE CARBON ANTIREFLECTION COATINGS FOR GaAs SOLAR CELLS
- CONTRIBUTION OF TYPE II QUANTUM DOTS INTO DARK CURRENT IN INTERMEDIATE-BAND SOLAR CELLS
- GENERATION-RECOMBINATION PHENOMENA IN THIN METAL OXIDES FILMS UNDER THE INFLUENCE OF GAMMA RADIATION
- LIGHT-ADDRESSABLE POTENTIOMETRIC SENSOR AS SEMICONDUCTOR-BASED SENSOR PLATFORM FOR (BIO-) CHEMICAL SENSING
- SHORT OUTLINE OF SILICON MOS-LIKE STRUCTURES FABRICATION TECHNIQUES, CVC AND NOISE MEASUREMENTS
- NOISE PROPERTIES OF THE STRUCTURES CONTAINING A LAYER OF POROUS SILICON, IN AIR AND IN CONDITIONS OF GAS ADSORPTION
- GROWTH AND INVESTIGATION OF INDIUM ARSENIDE−BASED DIODE HETEROSTRUCTURES FOR MID−INFRARED APPLICATION
- ARTIFICAL INDUCTOR EFFECT ON MOS TRANSISTORS
- DESIGN-SPECIFIC VARIATIONS IN VIA-CONTACT ETCH - FULL CHIP ANALYSIS
- EM-INDUCED DEGRADATIONS IN DUAL-INLAID COPPER INTERCONNECTS
- INVESTIGATION OF GLUCOSE SENSITIVITY OF POROUS SILICON
- NON-ABELIAN TENSOR GAUGE FIELDS ENHANCED SYMMETRIES
- THE LIQUID PHASE EPITAXY OF SELF–ASSEMBLED InAsSbP–BASED STRAIN INDUCED ISLANDS ON InAs SUBSTRATES AND THEIR EVOLUTION FROM PYRAMIDS TO QUANTUM DOTS
- DETERMINATION OF SPREADING PARAMETER IN MULTI-VALLEY SEMICONDUCTORS
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Armenian Journal of Physics, 2008, vol. 1, № 2
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Armenian Journal of Physics, 2008, vol. 1, № 3
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Armenian Journal of Physics, 2008, vol. 1, № 4
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Armenian Journal of Physics, 2008, vol. 1, № 1
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Armenian Journal of Physics, 2008, vol. 1
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Armenian Journal of Physics, 2009
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Armenian Journal of Physics, 2010
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Armenian Journal of Physics, 2011
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Armenian Journal of Physics, 2012
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Armenian Journal of Physics, 2013
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Armenian Journal of Physics, 2014
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Armenian Journal of Physics, 2015
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Armenian Journal of Physics, 2016
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Armenian Journal of Physics, 2017
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Armenian Journal of Physics, 2018
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Armenian Journal of Physics, 2019
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Armenian Journal of Physics, 2020
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Armenian Journal of Physics, 2021
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Armenian Journal of Physics, 2008
| Edition name | Date |
|---|---|
| GENERATION-RECOMBINATION PHENOMENA IN THIN METAL OXIDES FILMS UNDER THE INFLUENCE OF GAMMA RADIATION | May 19, 2021 |
