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Creator:
T. Wagner ; T. Yoshinobu ; M. J. Schöning
Corporate Creators:
Aachen University of Applied Sciences, Jülich Campus, Institute of Nano- and Biotechnologies (INB), Ginsterweg 1, 52428 Jülich, Germany ; Research Centre Jülich, Institute of Bio- and Nanosystems (IBN-2), 52428 Jülich, Germany ; Tohoku University, Department of Electronic Engineering, Aramaki Aza Aoba 6-6-05, Aoba-ku, Sendai, Miyagi 980-8579, Japan
Subject:
Physics ; Electronic and magnetic devices; microelectronics
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Abstract:
The light-addressable potentiometric sensor (LAPS) belongs to the class of field-effect-based sensor devices. Derived from early investigations on ion-selective field-effect transistors (ISFETs) [1], researchers first developed the electrolyte-insulator-semiconductor (EIS) capacitance to investigate the complex electrochemical- and surface mechanisms of the ISFET-gate region [2-4] . This was a consequential step, and followed the same way as the traditional development of MOSFETs (metal-oxide semiconductor field-effect transistor) and MOS (metal-oxide semiconductor) capacitances [5-8]. Due to the relatively simple manufacturing process and simple encapsulation, at the same time (bio-) chemical sensor development started to use EIS structures as an individual sensor platform [9-12] .
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