Object structure

Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics

Date of publication:

2008

Volume:

1

Number:

1

ISSN:

1829-1171

Title:

HEAVY METAL DETECTION WITH SEMICONDUCTOR DEVICES BASED ON PLD-PREPARED CHALCOGENIDE GLASS THIN FILMS

Creator:

J. P. Kloock ; M. J. Schöning

Corporate Creators:

Aachen University of Applied Sciences, Jülich Campus, Institute of Nano- and Biotechnologies (INB), Ginsterweg 1, 52428 Jülich, Germany ; Research Centre Jülich, Institute of Bio- and Nanosystems (IBN-2), 52428 Jülich, Germany

Subject:

Physics ; Microbiology ; Electronic and magnetic devices; microelectronics

Coverage:

95-98

Abstract:

Chalcogenide glass materials as membranes for potentiometric sensors for chemical analysis in solutions have been extensively studied in the past. Ion-selective electrodes with chalcogenide glass membranes dealt with the ion-sensing properties of this class of materials, followed by systematic investigations of their solid-state chemistry, the sensing mechanism and their analytical characteristics [1]. Recently, the analytical performance of chalcogenide glass membranes has been combined with techniques originally invented for semiconductor processing, in order to create a new generation of silicon-based sensors with chalcogenide glass thin films for heavy metal detection. For these modern and miniaturized sensor devices, however, it is necessary to prepare the sensitive material in a fast and cost-effective way. This especially becomes very interesting in terms of multi-sensor systems for the simultaneous measurement of different ions in solutions. Based on conventional chalcogenide glass bulk electrode materials, the authors have introduced the pulsed-laser deposition (PLD) process for the fabrication of complex chalcogenide glass materials in the thin-film state [2-11] . Miniaturized ion-selective electrodes (┬ÁISE), sensor array structures and field-effect structures such as the electrolyte-insulator-semiconductor (EIS) sensor, the light-addressable potentiometric sensor (LAPS) and the ion-sensitive field-effect transistor (ISFET) are selected as transducer materials for the readout of the sensor signal. The results for different chalcogenide glass materials together with different transducer structures will be presented.

Table of contents:


Place of publishing:


Digitisation sponsor:


Date created:

2008-04-26

Type:

Հոդված

Format:

pdf

Location of original object:

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