Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Date of publication:

2014

Volume:

7

Number:

1

ISSN:

1829-1171

Official URL:

Corporate Creators:

Yerevan State University, Department of Physics

Coverage:

38-49

Abstract:

The ground state energy and the extend of the wavefunction of a neutral donor located near a semiconductor surface in the presence of a STM metallic tip held at a fixed potential is obtained within a variational approach. We apply the effective mass approximation and use a variational wavefunction that takes into account the influence of all image charges that arise due to the presence of a metallic tip. The latter lowers the shallow donor energy which is lower than in the case when the donor is located at the same distance near a plane semiconductor-metal interface. The ionization process of a donor center due to the tip positive voltage is considered. In the case of negative voltage on the tip we observe a nonmonotonic behavior of the impurity electron binding energy.

Date created:

2014-04-13

Format:

pdf

Identifier:

oai:arar.sci.am:23369

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան