Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
Yerevan State University (YSU)
In recent years the thermoelectric properties of materials (specifically solid solutions on the basis of lead [1, 2]), in which conduction band (in the case of n-type semiconductor) or valence band (in the case of p-type semiconductor) has a two-valley structure are often investigated. During the analyses of experimental findings of thermoelectric properties it is very important to have the value of parameter -index of power in the dependence of the free path on the energy, which we’ll briefly denominate spreading parameter.
oai:arar.sci.am:23184
ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան
Apr 8, 2023
Feb 27, 2020
3
https://arar.sci.am/publication/25885
Edition name | Date |
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DETERMINATION OF SPREADING PARAMETER IN MULTI-VALLEY SEMICONDUCTORS | Apr 8, 2023 |
M. Mkrtchyan T. I. Butaeva A. Eganyan K. Ovanesyan
S. K. Nikoghosyan V. V. Harutunyan V. S. Baghdasaryan E. A. Mughnetsyan E. G. Zargaryan A. G. Sarkisyan
A. L. Harutyunyan
V. V. Buniatyan V. M. Hayrapetyan
A. P. Djotyan
A. H. Melikyan H. R. Minassian V. A. Paployan