Object

Title: SHORT OUTLINE OF SILICON MOS-LIKE STRUCTURES FABRICATION TECHNIQUES, CVC AND NOISE MEASUREMENTS

Journal or Publication Title:

Armenian Journal of Physics

Date of publication:

2008

Volume:

1

Number:

1

ISSN:

1829-1171

Corporate Creators:

Yerevan State University ; The George Washington University, Washington DC, USA ; "Transistor Plus" LLC, Yerevan, Armenia

Coverage:

118-122

Abstract:

The main trends in development of modern ICs (particularly employing MOS/CMOS structures) are related with decreasing of the integrated structures’ geometrical sizes, increasing of the integration density, decreasing of the power consumption, and increasing of the signal/noise ratio. As the wanted signal level is impossible to increase up to some certain critical level, there is a need to decrease internal noise level. In order to tackle the problem several methods are in use. Recently, a variation of MOS structures gate materials’ composition and structure has been successfully utilized [1]. In this article we present a short outline of fabrication technology, peculiarities of the current-voltage characteristics (CVC), and low-frequency noises of experimental samples of silicon MOS-like structures with tungsten (W), chromium (Cr), and iron (Fe) metallic contacts, which were prepared to estimate impact of phonons interface percolation dynamics on 1/f noise in semiconductor micro- and opto-electronic devices [2,3] .

Table of contents:


Place of publishing:


Digitisation sponsor:


Date created:

2008-04-26

Identifier:

oai:arar.sci.am:23175

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան

Object collections:

Last modified:

May 19, 2021

In our library since:

Feb 27, 2020

Number of object content hits:

5

All available object's versions:

https://arar.sci.am/publication/25876

Show description in RDF format:

RDF

Show description in OAI-PMH format:

OAI-PMH

This page uses 'cookies'. More information