Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Date of publication:

2015

Volume:

8

Number:

1

ISSN:

1829-1171

Official URL:

Corporate Creators:

Yerevan State University, Department of Physics of Semiconductors and Microelectronics

Coverage:

38-43

Abstract:

Theory of electron-phonon field-induced tunnel scattering in polar semiconductors under uniform electric field is considered. It is assumed that a non-degenerate n-type semiconductor has a spherical and parabolic simple band structure. On the basis of the study is the phenomenon of semiconductor bands tilting by the perturbing potential of an electric field. In that case electron eigenfunctions are not-plane waves or Bloch functions. They are determined by the Airy functions. An expression for the probability of electron intra-valley field-induced tunnel transitions related to polar optical phonon emission and absorption is obtained and analyzed.

Date created:

2015-03-13

Format:

pdf

Identifier:

oai:arar.sci.am:23396

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան