Object

Title: EM-INDUCED DEGRADATIONS IN DUAL-INLAID COPPER INTERCONNECTS

Journal or Publication Title:

Armenian Journal of Physics

Date of publication:

2008

Volume:

1

Number:

1

ISSN:

1829-1171

Corporate Creators:

Ponte Solutions Inc., Mountain View, CA 94040, USA

Coverage:

78-82

Abstract:

Electromigration (EM), i.e., electric current-induced transport of atoms in metals, becomes the main cause violating reliability of integrated circuit interconnects as the sizes of features go below 65 nm. Transfer of metal atoms from the cathode to the anode of the interconnect line is accompanied by the stress evolution: a tensile hydrostatic stress originates in the cathode region, resulting in the void formation, while a compressive stress near the anode creates hillocks and extrusions. Detailed study of EM is required for elaboration of design rules which can provide long-term chip reliability. An important problem for the dual-inlaid copper interconnects is the effect of the copper microstructure on EM resistance. The texture of the metal can affect this process through dependence of grain boundary (GB) diffusivity on misorientation angles. Besides, the orientation dependence of the elastic constants is also extremely important for stress evolution. The aim of this paper is to present a novel physical model of EM-induced stress evolution that accounts for vacancy migration and atoms plating on interfaces and GBs, and to describe the consequent void formation and development. The effect of the copper microstructure is studied both in voidless and void migration regimes.

Table of contents:


Place of publishing:


Digitisation sponsor:


Date created:

2008-04-26

Identifier:

oai:arar.sci.am:23180

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան

Object collections:

Last modified:

May 19, 2021

In our library since:

Feb 27, 2020

Number of object content hits:

0

All available object's versions:

https://arar.sci.am/publication/25881

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