Object structure

Journal or Publication Title:

Armenian Journal of Physics

Date of publication:

2008

Volume:

1

Number:

1

ISSN:

1829-1171

Title:

GROWTH AND INVESTIGATION OF INDIUM ARSENIDE−BASED DIODE HETEROSTRUCTURES FOR MID−INFRARED APPLICATION

Creator:

V. A. Gevorkyan ; K. M. Gambaryan ; M. S. Kazaryan

Corporate Creators:

Yerevan State University

Subject:

Electronic structure and electrical properties of surfaces ; Physics

Coverage:

112-117

Abstract:

Photovoltaic devices developed for most thermophotovoltaic (TPV) applications have bandgaps ranging from 0.5eV to 0.75eV. Most works on TPV devices has concentrated on III-V semiconductors InGaAs on InP (typically Eg = 0.5–0.73 eV, but limited by lattice mismatch to the high bandgap ranges) [1], or InGaAsSb on GaSb (limited to Eg > 0.5 eV by the miscibility gap) [2]. Although III–V ternary and quaternary semiconductors have widely tunable spectral responses, miscibility gaps and lattice mismatch constraints limit the practical range of bandgaps in most of these systems. System modeling results have indicated the advantages of still lower bandgap ( < 0.5 eV) TPV cells [3, 4]. A maximum efficiency and maximum power density can be achieved with bandgaps between 0.2–0.5 eV for black body sources temperature in the range of 1200K to 2500K. This bandgaps range is considerably lower than almost all conventional TPV cells. Thus, there is a need for significant development in both new materials used for TPVs and in processing, to produce high performance TPV converters with lower bandgaps. An alternative to InGaAs on InP and InGaAsSb on GaSb-substrate are less developed epitaxial InAsSbP lattice−matched structures on InAs or GaSb substrates [5-7] . Lattice-matched InAs/InAsSbP TPV cells have variable bandgaps ranging from 0.3 to 0.5 eV, that displace the spectral response to the long-wavelength range, which is impossible to cover by GaSb-based materials.

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Date created:

2008-04-26

Type:

Article

Location of original object:

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