Object

Title: ARTIFICAL INDUCTOR EFFECT ON MOS TRANSISTORS

Journal or Publication Title:

Armenian Journal of Physics

Date of publication:

2008

Volume:

1

Number:

1

ISSN:

1829-1171

Corporate Creators:

State Engineering University of Armenia (SEUA), Yerevan, Armenia

Coverage:

57-61

Abstract:

Recently the interest to the radio-frequency integrated circuits is sharply increased, connected with the rapid development of mobile communication. The modern integrated technology for RF applications (800 МHz­2.5G Hz) rather easily provides creation of active devices. However, the presence of high-quality passive components represents a serious problem for integrated realization [1, 2]. The high­quality inductor in monolithic performance is the most difficult to realize by methods, which would be compatible to modern planar manufacturing techniques of micro­ and nanoscale integrated circuits.bb

Table of contents:


Place of publishing:


Digitisation sponsor:


Date created:

2008-04-26

Identifier:

oai:arar.sci.am:23178

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան

Object collections:

Last modified:

May 19, 2021

In our library since:

Feb 27, 2020

Number of object content hits:

2

All available object's versions:

https://arar.sci.am/publication/25879

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Edition name Date
ARTIFICAL INDUCTOR EFFECT ON MOS TRANSISTORS May 19, 2021

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