Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
State Engineering University of Armenia (SEUA), Yerevan, Armenia
Recently the interest to the radio-frequency integrated circuits is sharply increased, connected with the rapid development of mobile communication. The modern integrated technology for RF applications (800 МHz2.5G Hz) rather easily provides creation of active devices. However, the presence of high-quality passive components represents a serious problem for integrated realization [1, 2]. The highquality inductor in monolithic performance is the most difficult to realize by methods, which would be compatible to modern planar manufacturing techniques of micro and nanoscale integrated circuits.bb
oai:arar.sci.am:23178
ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան
Dec 13, 2023
Feb 27, 2020
31
https://arar.sci.am/publication/25879
Edition name | Date |
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ARTIFICAL INDUCTOR EFFECT ON MOS TRANSISTORS | Dec 13, 2023 |
V. V. Buniatyan V. M. Hayrapetyan
S. K. Nikoghosyan V. V. Harutunyan V. S. Baghdasaryan E. A. Mughnetsyan E. G. Zargaryan A. G. Sarkisyan
A. L. Harutyunyan
M. Mkrtchyan T. I. Butaeva A. Eganyan K. Ovanesyan
A. H. Melikyan H. R. Minassian V. A. Paployan