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Journal or Publication Title:
Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
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Title:
ARTIFICAL INDUCTOR EFFECT ON MOS TRANSISTORS
Creator:
V. V. Buniatyan ; G. M. Travajyan ; A. H. Asatryan
Corporate Creators:
State Engineering University of Armenia (SEUA), Yerevan, Armenia
Subject:
Physics ; Electronic transport in condensed matter
Coverage:
Abstract:
Recently the interest to the radio-frequency integrated circuits is sharply increased, connected with the rapid development of mobile communication. The modern integrated technology for RF applications (800 МHz2.5G Hz) rather easily provides creation of active devices. However, the presence of high-quality passive components represents a serious problem for integrated realization [1, 2]. The highquality inductor in monolithic performance is the most difficult to realize by methods, which would be compatible to modern planar manufacturing techniques of micro and nanoscale integrated circuits.bb
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