Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Date of publication:

2008

Volume:

1

Number:

1

ISSN:

1829-1171

Official URL:

Corporate Creators:

Yerevan State University (YSU) ; The George Washington University, Washington DC, USA ; "Transistor Plus" LLC, Yerevan, Armenia

Coverage:

118-122

Abstract:

The main trends in development of modern ICs (particularly employing MOS/CMOS structures) are related with decreasing of the integrated structures’ geometrical sizes, increasing of the integration density, decreasing of the power consumption, and increasing of the signal/noise ratio. As the wanted signal level is impossible to increase up to some certain critical level, there is a need to decrease internal noise level. In order to tackle the problem several methods are in use. Recently, a variation of MOS structures gate materials’ composition and structure has been successfully utilized [1]. In this article we present a short outline of fabrication technology, peculiarities of the current-voltage characteristics (CVC), and low-frequency noises of experimental samples of silicon MOS-like structures with tungsten (W), chromium (Cr), and iron (Fe) metallic contacts, which were prepared to estimate impact of phonons interface percolation dynamics on 1/f noise in semiconductor micro- and opto-electronic devices [2,3] .

Table of contents:

Place of publishing:

Digitisation sponsor:

Date created:

2008-04-26

Format:

pdf

Identifier:

oai:arar.sci.am:23175

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան