Հրապարակման մանրամասներ:

Established in 2008

Ամսագրի կամ հրապարակման վերնագիր:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Հրապարակման ամսաթիվ:

2014

Հատոր:

7

Համար:

4

ISSN:

1829-1171

Պաշտոնական URL:

Համատեղ հեղինակները:

Yerevan State University, Department of Physics of Semiconductors and Microelectronics

Ծածկույթ:

224-243

Ամփոփում:

The influence of external uniform electric field on the electron mobility variance in a non-degenerate n-type semiconductor is considered. In the course of analysis of results of mobility fluctuation theory, according to which electron mobility variance in equilibrium semiconductor equals infinity, it is shown that in the presence of uniform electric field the mobility variance becomes finite. The effect is explained in terms of the so-called electronphonon FIT (field-induced tunnel) scattering. The results of numerical computations of mobility variance dependence on the electric field for n-Si and n-Ge at 300 K are presented. It is revealed that mobility variance decreases by the logarithmic law with the electric field increase. The consideration of a mobility noise reciprocal problem established that the frequency dependence of mobility noise spectral density has a range of low-frequency plateau as well as ranges of 1/f and approximately 1/f dependencies. Low-frequency limit of 1/f dependence decreases to zero when the electric field tends to zero. A good agreement between mobility noise and current 1/fnoise in single crystal n-silicon is observed.

Ստեղծման ամսաթիվը:

2014-12-07

Ձևաչափ:

pdf

Նույնացուցիչ:

oai:arar.sci.am:23390

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