Aachen University of Applied Sciences, Jülich Campus, Institute of Nano- and Biotechnologies (INB), Ginsterweg 1, 52428 Jülich, Germany ; Research Centre Jülich, Institute of Bio- and Nanosystems (IBN-2), 52428 Jülich, Germany ; Tohoku University, Department of Electronic Engineering, Aramaki Aza Aoba 6-6-05, Aoba-ku, Sendai, Miyagi 980-8579, Japan

Physics ; Electronic and magnetic devices; microelectronics

The light-addressable potentiometric sensor (LAPS) belongs to the class of ﬁeld-effect-based sensor devices. Derived from early investigations on ion-selective ﬁeld-effect transistors (ISFETs) [1], researchers ﬁrst developed the electrolyte-insulator-semiconductor (EIS) capacitance to investigate the complex electrochemical- and surface mechanisms of the ISFET-gate region [2-4] . This was a consequential step, and followed the same way as the traditional development of MOSFETs (metal-oxide semiconductor ﬁeld-effect transistor) and MOS (metal-oxide semiconductor) capacitances [5-8]. Due to the relatively simple manufacturing process and simple encapsulation, at the same time (bio-) chemical sensor development started to use EIS structures as an individual sensor platform [9-12] .