Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Date of publication:

2008

Volume:

1

Number:

2

ISSN:

1829-1171

Official URL:

Coverage:

174-177

Abstract:

A new model of short-channel SiC MOSFET’s threshold-voltage simulation is presented. The model is based on detailed analysis of the charge conservation law in the region bounded by the gate electrode and the semiconductor bulk.

Table of contents:

Place of publishing:

Digitisation sponsor:

Date created:

2008-08-28

Format:

pdf

Identifier:

oai:arar.sci.am:23196

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան