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Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
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Title:
THRESHOLD VOLTAGE MODEL OF SiC SHORT CHANNEL MOSFET’s WITH DEEP IMPURITY LEVELS AND TRAPS
Creator:
V. V. Buniatyan ; V. M. Hayrapetyan
Subject:
Physics ; Electronic transport in condensed matter
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Abstract:
A new model of short-channel SiC MOSFET’s threshold-voltage simulation is presented. The model is based on detailed analysis of the charge conservation law in the region bounded by the gate electrode and the semiconductor bulk.
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