Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Date of publication:

2018

Volume:

11

Number:

4

ISSN:

1829-1171

Official URL:

Corporate Creators:

Institute of Radiophysics and Electronics of NAS RA

Coverage:

269-272

Abstract:

A compact capacitance model is developed accounting for small-geometry effects in FinFETs. While decreasing the channel length, the transcapacitance model becomes very sensitive to all short channel effects, both in moderate and strong inversion regimes. In addition, for short channel devices, we need to take into account the inter-electrode capacitive coupling in the subthreshold regime, which is not significant for long channel devices. The quantum mechanical effects, which are very significant for thin Fins, are included in the model. The effect of mobility degradation on C-V characteristics is also demonstrated. The model was validated with numerical 3D Atlas simulations and a good accuracy of the model has been demonstrated in all operating regimes.

Date created:

2018-12-28

Format:

pdf

Identifier:

oai:arar.sci.am:23523

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան