Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Date of publication:

2016

Volume:

9

Number:

1

ISSN:

1829-1171

Official URL:

Corporate Creators:

Institute of Radiophysics and Electronics of NAS RA

Coverage:

1-5

Abstract:

Results of studies of dark current-voltage and capacitance-voltage characteristics of near-infrared sensitive (p)InSb/(n)CdTe heterostructure are presented. It is shown that the junction fabricated by the pulsed laser deposition (PLD) technology has a low number of states at the interface, which leads to the electrical properties explained by physical characteristics of heterostructure pairs.

Date created:

2016-03-19

Format:

pdf

Identifier:

oai:arar.sci.am:23422

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան