Օբյեկտ
Վերնագիր: THE DARK CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF NEAR-INFRARED SENSITIVE (p)InSb/(n)CdTe HETEROSTRUCTURE
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Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
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Institute of Radiophysics and Electronics of NAS RA
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Abstract:
Results of studies of dark current-voltage and capacitance-voltage characteristics of near-infrared sensitive (p)InSb/(n)CdTe heterostructure are presented. It is shown that the junction fabricated by the pulsed laser deposition (PLD) technology has a low number of states at the interface, which leads to the electrical properties explained by physical characteristics of heterostructure pairs.
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oai:arar.sci.am:23422
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ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան
Օբյեկտի հավաքածուներ:
Վերջին անգամ ձևափոխված:
Dec 13, 2023
Մեր գրադարանում է սկսած:
Feb 27, 2020
Օբյեկտի բովանդակության հարվածների քանակ:
48
Օբյեկտի բոլոր հասանելի տարբերակները:
https://arar.sci.am/publication/26175
Ցույց տուր նկարագրությունը RDF ձևաչափով:
Ցույց տուր նկարագրությունը OAI-PMH ձևաչափով։
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| Հրատարակության անուն | Ամսաթիվ |
|---|---|
| THE DARK CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF NEAR-INFRARED SENSITIVE (p)InSb/(n)CdTe HETEROSTRUCTURE | Dec 13, 2023 |
