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Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
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Institute of Radiophysics and Electronics of NAS RA
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Results of studies of dark current-voltage and capacitance-voltage characteristics of near-infrared sensitive (p)InSb/(n)CdTe heterostructure are presented. It is shown that the junction fabricated by the pulsed laser deposition (PLD) technology has a low number of states at the interface, which leads to the electrical properties explained by physical characteristics of heterostructure pairs.