GENERAL EXPRESSION OF TEMPERATURE DEPENDENCE FOR HOLE AND ELECTRON CONCENTRATION IN MANY-VALLEY SEMICONDUCTORS

A. I. Vahanyan

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Title: GENERAL EXPRESSION OF TEMPERATURE DEPENDENCE FOR HOLE AND ELECTRON CONCENTRATION IN MANY-VALLEY SEMICONDUCTORS

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ISSN:

1829-1171

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Corporate Creators:

Yerevan State University, Department of Physics of Semiconductors and Microelectronics

Coverage:

69-74

Abstract:

On the basis of charge neutrality equation, the expression for the temperature dependence of the charge carrier concentration in a non-degenerate many-valley semiconductor is derived

Date created:

2014-05-26

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pdf

Identifier:

oai:arar.sci.am:23372

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան

Subject and keywords:

Physics Electronic and magnetic devices; microelectronics

Object collections:

Digital Library > Articles

Last modified:

Dec 13, 2023

In our library since:

Feb 27, 2020

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https://arar.sci.am/publication/26114

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Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

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GENERAL EXPRESSION OF TEMPERATURE DEPENDENCE FOR HOLE AND ELECTRON CONCENTRATION IN MANY-VALLEY SEMICONDUCTORS	Dec 13, 2023

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Title: GENERAL EXPRESSION OF TEMPERATURE DEPENDENCE FOR HOLE AND ELECTRON CONCENTRATION IN MANY-VALLEY SEMICONDUCTORS

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