Publication Details:
Journal or Publication Title:
Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
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Corporate Creators:
Yerevan State University, Department of Physics of Semiconductors and Microelectronics
Subject:
Physics ; Electronic and magnetic devices; microelectronics
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Abstract:
On the basis of charge neutrality equation, the expression for the temperature dependence of the charge carrier concentration in a non-degenerate many-valley semiconductor is derived