Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Date of publication:

2011

Volume:

4

Number:

1

ISSN:

1829-1171

Official URL:

Coverage:

62-73

Abstract:

The statistical non-triviality of current carrier mobility fluctuations in non-degenerate semiconductors is studied in the frames of the newly developed variance approach theory. Expressions for electron mobility variances conditioned by the fluctuations of conduction band energy level occupancy and electron quasi-momentum relaxation time are obtained and analyzed. It is established that the fluctuations of the quasi-momentum relaxation time cannot be a “self-reliant” source of current 1/f-noise. A new and more general expression for Hooge’s coefficient is proposed. The newly proposed approach makes possible to investigate properties of spectral density of noises in a novel way incorporating potential mechanisms of fluctuations origin in semiconductors.

Date created:

2011-06-20

Format:

pdf

Identifier:

oai:arar.sci.am:23294

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան