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Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
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ELECTRON MOBILITY VARIANCE IN SEMICONDUCTORS: THE VARIANCE APPROACH
Ստեղծողը:
S. V. Melkonyan ; H. V. Asriyan ; Ash. V. Surmalyan ; J. M. Smulko
Խորագիր:
Physics ; Electronic structure and electrical properties of surfaces
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Ամփոփում:
The statistical non-triviality of current carrier mobility fluctuations in non-degenerate semiconductors is studied in the frames of the newly developed variance approach theory. Expressions for electron mobility variances conditioned by the fluctuations of conduction band energy level occupancy and electron quasi-momentum relaxation time are obtained and analyzed. It is established that the fluctuations of the quasi-momentum relaxation time cannot be a “self-reliant” source of current 1/f-noise. A new and more general expression for Hooge’s coefficient is proposed. The newly proposed approach makes possible to investigate properties of spectral density of noises in a novel way incorporating potential mechanisms of fluctuations origin in semiconductors.