Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
Yerevan State University, Department of Physics of Semiconductors and Microelectronics
CVC and low-frequency noises of metal-semiconductor contacts at the room temperature have been researched when the current flows through volume and surface of the samples. We investigate CVC and low-frequency spectra of diode structures with one Schottky barrier and with double oppositely offset barriers made on Cr/n-Si, W/n-Si contacts. It is shown that CVC and the level of the noises strongly depend on the surface area of the metallic contacts. The Physical processes taking part in the volume and surface of this structures which are influences on the behavior of low-frequency noises, are also presented. It is show that for decreasing of the lowfrequency noises’ level it is more reasonable to use contacts with small surface area.
oai:arar.sci.am:23395
ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան
Dec 13, 2023
Feb 27, 2020
16
https://arar.sci.am/publication/26142
Edition name | Date |
---|---|
Influence of the metallic contact surface area on the low frequency noises of metal-semiconductor contacts | Dec 13, 2023 |
A. O. Vardanyan S. R. Melikyan K. A. Movsesyan D. L. Oganesyan E. V. Chakhoyan
L. Odabashyan Babajanyan, A. Zh. Baghdasaryan B. Friedman K. Lee
Conference Chairs: Arsen Hakhoumian, (Dr.Sc., Ass. Member NAS RA, IRPhE, Armenia) Tigran Zakaryan (Dr. CEO IRPhE, Armenia)
M. V. Navasardyan K. Y. Muradyan K. V. Kutsenko