Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
Yerevan State University, Department of Physics of Semiconductors and Microelectronics
Theory of electron-polar optical single phonon field-induced tunnel scattering under the influence of an electric field is considered. It is assumed that the non-degenerate polar semiconductor has a spherical parabolic band structure. In low-field regime, an expression for the scattering time is obtained. Dependence of the scattering time (the scattering rate) on the electron energy is analyzed. The results of corresponding numerical computations for an n-GaAs at 300 K are presented. It is established that there is no fracture on the curve of electron scattering time (scattering rate) dependence on the electron energy.
oai:arar.sci.am:23507
ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան
Dec 13, 2023
Feb 27, 2020
26
https://arar.sci.am/publication/26273
Edition name | Date |
---|---|
Relaxation Time of Electron – Polar Optical Phonon Field-Induced Tunnel Scattering | Dec 13, 2023 |
R. G. Petrosyan M. A. Davtyan
H. Arian Zad A. Zoshki N. Ananikian
A. P. Djotyan Avetisyan, A. A. K. Moulopoulos
D. H. Simonyan
V. V. Harutyunyan E. M. Aleksanyan V. C. Baghdasaryan P. B. Kostanyan G. Bondarenko M. Kirm S. Vielhauer