Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Date of publication:

2018

Volume:

11

Number:

2

ISSN:

1829-1171

Official URL:

Corporate Creators:

National Polytechnic University of Armenia

Coverage:

84-90

Abstract:

p-Si/BaxSr1-xTiO3 heterojunction properties are investigated by electrochemical impedance spectroscopy method for the first time. The general equivalent circuit model is proposed in circuit description code as: Cf, Rf, Ch,Rh,Rp, where Cf, Rf are the BaxSr1-xTiO3 film conditioned capacitance and resistance, Ch, Rh are the heterojunction depletion layer capacitance and resistance, respectively, Rp is the series resistance. It is stated that the Bode plot curves of the structure in air mostly affected by the depletion layer capacitance of heterojunction Ch(V) .

Date created:

2018-07-14

Format:

pdf

Identifier:

oai:arar.sci.am:23506

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան