Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Date of publication:

2018

Volume:

11

Number:

2

ISSN:

1829-1171

Official URL:

Corporate Creators:

Yerevan State University, Department of Physics of Semiconductors and Microelectronics

Coverage:

91-100

Abstract:

Theory of electron-polar optical single phonon field-induced tunnel scattering under the influence of an electric field is considered. It is assumed that the non-degenerate polar semiconductor has a spherical parabolic band structure. In low-field regime, an expression for the scattering time is obtained. Dependence of the scattering time (the scattering rate) on the electron energy is analyzed. The results of corresponding numerical computations for an n-GaAs at 300 K are presented. It is established that there is no fracture on the curve of electron scattering time (scattering rate) dependence on the electron energy.

Date created:

2018-07-14

Format:

pdf

Identifier:

oai:arar.sci.am:23507

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան