Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Date of publication:

2013

Volume:

6

Number:

4

ISSN:

1829-1171

Official URL:

Corporate Creators:

State Engineering University of Armenia (SEUA), Yerevan, Armenia ; Yerevan State University (YSU) ; FH Aachen University of Applied Sciences, Institute of Nano- and Biotechnologies, Campus Jülich, Germany

Coverage:

177-187

Abstract:

An amorphous BaxSr1-x TiO3/pc - Si (polycrystalline silicon) anisotropic heterojunction was systematically investigated in terms of built-in potentials, interface potentials and space - charge depletion layer widths. The presence of oxygen vacancies as well as the non-linear dependence of the dielectric permittivity of ferroelectric films on the electric field is considered for different values of oxygen vacancies and doping levels in silicon.

Date created:

2013-11-10

Format:

pdf

Identifier:

oai:arar.sci.am:23361

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան