Publication Details:
Journal or Publication Title:
Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
Date of publication:
Volume:
Number:
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Title:
BaxSr1-x TiO3/pc-Si HETEROJUNCTION
Creator:
V. V. Buniatyan ; C. Huck ; A. Poghossian ; V. M. Aroutiounian ; M. J. Schoening
Corporate Creators:
State Engineering University of Armenia (SEUA), Yerevan, Armenia ; Yerevan State University (YSU) ; FH Aachen University of Applied Sciences, Institute of Nano- and Biotechnologies, Campus Jülich, Germany
Subject:
Physics ; Materials science ; Electronic and magnetic devices; microelectronics
Coverage:
Abstract:
An amorphous BaxSr1-x TiO3/pc - Si (polycrystalline silicon) anisotropic heterojunction was systematically investigated in terms of built-in potentials, interface potentials and space - charge depletion layer widths. The presence of oxygen vacancies as well as the non-linear dependence of the dielectric permittivity of ferroelectric films on the electric field is considered for different values of oxygen vacancies and doping levels in silicon.