Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Date of publication:

2013

Volume:

6

Number:

4

ISSN:

1829-1171

Official URL:

Corporate Creators:

State Engineering University of Armenia (SEUA), Yerevan, Armenia ; FH Aachen University of Applied Sciences, Institute of Nano- and Biotechnologies, Campus Jülich, Germany ; Yerevan State University, Department of Physics of Semiconductors and Microelectronics

Coverage:

188-197

Abstract:

An-amorphous BaxSr1-x TiO3/ polycrystalline (pc) silicon anis-type heterojunction capacitance was evaluated theoretically and studied experimentally, taking into account the presence of oxygen vacancies in ferroelectric film as well as non-linear dependence of the ferroelectric films dielectric permittivity on the electric field for different values of oxygen vacancies concentration and doping levels in silicon.

Date created:

2013-11-18

Format:

pdf

Identifier:

oai:arar.sci.am:23362

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան