Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
State Engineering University of Armenia (SEUA), Yerevan, Armenia ; FH Aachen University of Applied Sciences, Institute of Nano- and Biotechnologies, Campus Jülich, Germany ; Yerevan State University, Department of Physics of Semiconductors and Microelectronics
An-amorphous BaxSr1-x TiO3/ polycrystalline (pc) silicon anis-type heterojunction capacitance was evaluated theoretically and studied experimentally, taking into account the presence of oxygen vacancies in ferroelectric film as well as non-linear dependence of the ferroelectric films dielectric permittivity on the electric field for different values of oxygen vacancies concentration and doping levels in silicon.
oai:arar.sci.am:23362
ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան
Dec 13, 2023
Feb 27, 2020
25
https://arar.sci.am/publication/26100
Edition name | Date |
---|---|
BaxSr1-x TiO3/pc-Si HETEROJUNCTION CAPACITANCE | Dec 13, 2023 |
V. V. Buniatyan C. Huck A. Poghossian V. M. Aroutiounian M. J. Schoening
M. Kerobyan R. B. Kostanyan S. Soghomonyan Essaian, S.
A. Ranjgar R. Norouzi A. Zolanvari H. Sadeghi
Գալստյան, Օգսեն Արամի Գիտական ղեկավար`Ֆիզ. մաթ. գիտ. թեկնածու Ա. Ա. Հախումյան