Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Date of publication:

2012

Volume:

5

Number:

4

ISSN:

1829-1171

Official URL:

Coverage:

194-202

Abstract:

The developments of ion-selective field-effect transistors (ISFET) are very furious and create pride. The importance of work in this field issued in last years because of increased ISFETs applications. Among these devices, proton-sensitive ISFETs are the more deeply analyzed. ISFET have a very fast response time, high sensitivity, small size, robustness and the potential for on-chip circuit integration.

Date created:

2012-12-29

Format:

pdf

Identifier:

oai:arar.sci.am:23339

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան