Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Date of publication:

2012

Volume:

5

Number:

4

ISSN:

1829-1171

Official URL:

Coverage:

184-193

Abstract:

We deposited three different Ni(20 nm,15 nm)/Au(10 nm,5 nm)/Si(111) multilayers using the dc sputtering method in order to study the nanostructure evolution by X-ray diffraction (XRD) and in situ High Temperature XRD (HT-XRD), with increasing annealing temperature. The nanostructural properties of the Ni/Au contact to p-Si were also investigated during annealing. The Ni/Au/Si contact layers were annealed in situ in vacuum chamber for 180 minute up to 500°C. The Ni layer was in contact with the p-Si before annealing. However, after annealing, the Au layer had diffused from the top layer to the interface. The Au layer on the p-Si surface resulting from the in diffusion of Au atoms during annealing may contribute to ohmic contact formation. Based on the Fuzzy Model Simulation (FMS), we also confirm the behavior of Ni/Au system with increasing annealing temperature.

Date created:

2012-12-29

Format:

pdf

Identifier:

oai:arar.sci.am:23338

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան