Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Date of publication:

2011

Volume:

4

Number:

1

ISSN:

1829-1171

Official URL:

Coverage:

56-61

Abstract:

Experiments show that the layer of separate confinement heterostructure (SCH) has a significant influence on the emission spectrum of semiconductor optical amplifiers (SOAs). Reducing the thickness of the SCH layer at the p-side could improve the uniformity of carrier distribution among multiple quantum wells (MQWs). With three In0.67Ga0.33As0.72P0.28 QWs near the p-side and two In0.53Ga0.47As QWs near the n-side, when the thickness of the SCH layer changes from 120 nm to 30 nm, the operation current for SOAs to exhibit the full-width at half-maximum (FWHM) spectral width of above 270 nm could be reduced from 500 mA to 160 mA.

Date created:

2011-06-20

Format:

pdf

Identifier:

oai:arar.sci.am:23293

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան