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Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
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Title:
IMPROVING CHARACTERISTICS OF NANOSTRUCTURED DEVICES BY SEPARATE CONFINEMENT HETEROSTRUCTURE LAYER
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Subject:
Physics ; Electronic structure and electrical properties of surfaces
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Abstract:
Experiments show that the layer of separate confinement heterostructure (SCH) has a significant influence on the emission spectrum of semiconductor optical amplifiers (SOAs). Reducing the thickness of the SCH layer at the p-side could improve the uniformity of carrier distribution among multiple quantum wells (MQWs). With three In0.67Ga0.33As0.72P0.28 QWs near the p-side and two In0.53Ga0.47As QWs near the n-side, when the thickness of the SCH layer changes from 120 nm to 30 nm, the operation current for SOAs to exhibit the full-width at half-maximum (FWHM) spectral width of above 270 nm could be reduced from 500 mA to 160 mA.