NUCLEATION MECHANISM OF STRAIN-INDUCED INASSBP QUANTUM DOTS AND PITS AT LIQUID PHASE EPITAXY ON InAs (100) SUBSTRATE

V. M. Aroutiounian; K. M. Gambaryan; N. G. Alaverdyan; A. K. Simonyan

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Title: NUCLEATION MECHANISM OF STRAIN-INDUCED INASSBP QUANTUM DOTS AND PITS AT LIQUID PHASE EPITAXY ON InAs (100) SUBSTRATE

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1829-1171

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Coverage:

268-273

Abstract:

Application of the InAsSbP and other similar quaternary materials open up interesting physical and technological prospects for the controlled growth of QDs, QPs and dots–pits cooperative systems. At the growth of lattice matched with the substrate heterolayers from the quaternary liquid phase, corresponding variation of the third and fourth components allows providing needed sign of the misfit, i.e. to provide tensile or compressive misfit stress.

Date created:

2009

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pdf

Identifier:

oai:arar.sci.am:23246

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ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան

Subject and keywords:

Physics Electronic structure and electrical properties of surfaces

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Digital Library > Articles

Last modified:

Dec 13, 2023

In our library since:

Feb 27, 2020

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https://arar.sci.am/publication/25958

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Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

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NUCLEATION MECHANISM OF STRAIN-INDUCED INASSBP QUANTUM DOTS AND PITS AT LIQUID PHASE EPITAXY ON InAs (100) SUBSTRATE	Dec 13, 2023

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Title: NUCLEATION MECHANISM OF STRAIN-INDUCED INASSBP QUANTUM DOTS AND PITS AT LIQUID PHASE EPITAXY ON InAs (100) SUBSTRATE

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