Object

Title: THEORY OF GAS SENSOR MADE OF FIELD-EFFECT TRANSISTOR WITH NANOTUBES

Journal or Publication Title:

Armenian Journal of Physics

Date of publication:

2012

Volume:

5

Number:

1

ISSN:

1829-1171

Coverage:

15-20

Abstract:

We present a mathematical model of nanotube-based gas sensor. We consider a gas sensor as a back gate field-effect transistor with nanotube channel. A sensitivity of nanotube in gas media and back gate field-effect transistor current-voltage characteristics were modeled.

Date created:

2012-04-17

Identifier:

oai:arar.sci.am:23314

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան

Object collections:

Last modified:

May 19, 2021

In our library since:

Feb 27, 2020

Number of object content hits:

0

All available object's versions:

https://arar.sci.am/publication/26043

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