Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
We present a mathematical model of nanotube-based gas sensor. We consider a gas sensor as a back gate field-effect transistor with nanotube channel. A sensitivity of nanotube in gas media and back gate field-effect transistor current-voltage characteristics were modeled.
oai:arar.sci.am:23314
ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան
Dec 13, 2023
Feb 27, 2020
28
https://arar.sci.am/publication/26043
Հրատարակութեան անունը | Թուական |
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THEORY OF GAS SENSOR MADE OF FIELD-EFFECT TRANSISTOR WITH NANOTUBES | Dec 13, 2023 |
V. M. Aroutiounian
V. G. Paremuzyan V. M. Aroutiounian
V. M. Aroutiounian V. M. Arakelyan V. E. Galstyan Kh. S. Martirosyan P. G. Soukiassian
V. E. Galstyan V. M. Aroutiounian V. M. Arakelyan G. E. Shahnazaryan
K. M. Gambaryan V. M. Aroutiounian T. Boeck M. Schulze P. G. Soukiassian
V. M. Aroutiounian K. M. Gambaryan N. G. Alaverdyan A. K. Simonyan
Hovhannisyan, A. S. Kh. S. Martirosyan V. M. Aroutiounian P. G. Soukiassian