Object

Title: Electronic and Transport Properties of Boron Nitride Nanodevice

Corporate Creators:

Russian-Armenian (Slavonic) University, Yerevan, Armenia ; Peter the Great St. Petersburg Polytechnic University, 29 Politekhnicheskaya str., St. Petersburg 195251, Russia ; Synopsys Armenia, Yerevan, Armenia

Coverage:

344-348

Abstract:

Boron Nitride Nanotubes are valued due to their physical and chemical properties. They can be found their possible applications in the field of design and developing of optoelectronic devices of new generation. In this paper the transport and electronic properties of both clear Boron Nitride and Boron Nitride Nanotube with embedded carbon atoms have been calculated in the framework of Density Functional Theory (DFT). Results show that nanodevice with embedded carbon atoms has wider transmission spectrum than clear one. It has been computed transmission eigenvalues for both nanodevices. Nanodevice with impurity has higher transmission eigenvalues than clear one.

Date created:

2019-12-31

Identifier:

oai:arar.sci.am:23584

Journal or Publication Title:

Armenian Journal of Physics

Date of publication:

2019

Volume:

12

Number:

4

ISSN:

1829-1171

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան

Object collections:

Last modified:

Jan 25, 2021

In our library since:

Feb 27, 2020

Number of object content hits:

0

All available object's versions:

https://arar.sci.am/publication/26359

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