Object structure

Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Date of publication:

2019

Volume:

12

Number:

4

ISSN:

1829-1171

Official URL:


Title:

Electronic and Transport Properties of Boron Nitride Nanodevice

Creator:

I. M. Danglyan ; E. M. Kazaryan ; D. B. Hayrapetyan

Corporate Creators:

Russian-Armenian (Slavonic) University, Yerevan, Armenia ; Peter the Great St. Petersburg Polytechnic University, 29 Politekhnicheskaya str., St. Petersburg 195251, Russia ; Synopsys Armenia, Yerevan, Armenia

Subject:

Physics ; Electronic structure and electrical properties of surfaces ; Materials science

Coverage:

344-348

Abstract:

Boron Nitride Nanotubes are valued due to their physical and chemical properties. They can be found their possible applications in the field of design and developing of optoelectronic devices of new generation. In this paper the transport and electronic properties of both clear Boron Nitride and Boron Nitride Nanotube with embedded carbon atoms have been calculated in the framework of Density Functional Theory (DFT). Results show that nanodevice with embedded carbon atoms has wider transmission spectrum than clear one. It has been computed transmission eigenvalues for both nanodevices. Nanodevice with impurity has higher transmission eigenvalues than clear one.

Date created:

2019-12-31

Type:

Հոդված

Format:

pdf

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան