Publication Details:
Journal or Publication Title:
Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
Date of publication:
Volume:
Number:
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Title:
BaxSr1-x TiO3/pc-Si HETEROJUNCTION CAPACITANCE
Creator:
V. V. Buniatyan ; C. Huck ; A. Poghossian ; V. M. Aroutiounian ; M. J. Schoening
Corporate Creators:
State Engineering University of Armenia (SEUA), Yerevan, Armenia ; FH Aachen University of Applied Sciences, Institute of Nano- and Biotechnologies, Campus Jülich, Germany ; Yerevan State University, Department of Physics of Semiconductors and Microelectronics
Subject:
Physics ; Materials science ; Electronic and magnetic devices; microelectronics
Coverage:
Abstract:
An-amorphous BaxSr1-x TiO3/ polycrystalline (pc) silicon anis-type heterojunction capacitance was evaluated theoretically and studied experimentally, taking into account the presence of oxygen vacancies in ferroelectric film as well as non-linear dependence of the ferroelectric films dielectric permittivity on the electric field for different values of oxygen vacancies concentration and doping levels in silicon.