Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
In recent two decades, a large research effort has been devoted to quantum dots (QDs), quantum wires and pits due to their modified density of states, fascinating optoelectronic properties and device applications for lasers, photodetectors and other electronic devices. In general, quantum dots have better optical properties than other quantum nanostructures since electrons and holes are trapped in all three dimensions. This leads to a δ-like electronic density of states where the energy levels are totally quantized. It allows better device performance, for instance, to increase infrared photodetectors response and operating temperature, higher gain and lower threshold currents for lasers, as well as higher efficiency of solar cells.
oai:arar.sci.am:23249
ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան
Dec 13, 2023
Feb 27, 2020
30
https://arar.sci.am/publication/25961
Edition name | Date |
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COOPERATIVE NUCLEATION OF STRAIN-INDUCED InAsSbP QUANTUM DOTS AND PITS ON InAs (100) SUBSTRATE BY LIQUID PHASE EPITAXY | Dec 13, 2023 |
V. A. Gevorkyan K. M. Gambaryan M. S. Kazaryan
V. M. Aroutiounian K. M. Gambaryan N. G. Alaverdyan A. K. Simonyan
K. M. Gambaryan V. M. Aroutiounian T. Boeck M. Schulze P. G. Soukiassian
N. Yeranyan S. G. Petrosyan A. Musayelyan L. Arutiunyan K. Avdjyan
I. M. Danglyan E. M. Kazaryan D. B. Hayrapetyan
M. A. Araghi
V. M. Aroutiounian
V. V. Buniatyan G. S. Melikyan R. K. Hovsepyan A. V. Papoyan