Publication Details:

Լույս է տեսնում 1966 թվականից՝ տարին 4 անգամ։

Journal or Publication Title:

ՀՀ ԳԱԱ Տեղեկագիր: Ֆիզիկա = Proceedings of the NAS RA: Physics

Date of publication:

2020

Volume:

55

Number:

2

ISSN:

0002-3035

Official URL:

Additional Information:

Andreev V. V. , Bondarenko G. G., Andreev D. V., Stolyarov A. A.

Other title:

Use of MIS Sensors of Radiation in High-Field Electron Injection Modes

Contributor(s):

Պատ․ խմբ․՝ Գ․ Մ․ Ղարիբյան (1966-1992) ; Գլխ․ խմբ․՝ Վ․ Մ․ Հարությունյան (1993-2021) ; Կ․ Մ․ Ղամբարյան (2022-)

Coverage:

205–217

Abstract:

A model is proposed that describes the change in the charge state of metal-insulatorsemiconductor (MIS) structures and sensors made from it’s under the conditions of the simultaneous effect of radiation ionization and high-field injection of electrons from a semiconductor. The proposed model takes into account the interaction of injected electrons with holes generated by radiation and high-field ionization and trapped at the interface of the SiO2 film with a semiconductor, as well as the generation of surface states during the annihilation of part of holes during their interaction with injected electrons. It is shown that the MIS sensor, where the high-field injection of electrons into the dielectric film takes place, can be used to control the intensity of radiation by determining the radiation ionization current from the time dependence of the voltage incident on the sensor using the proposed model. It has been established that in the high-field electron injection mode, a significant increase in the dose sensitivity of MIS sensors is possible, but at the same time, the operating time and dose range of the MIS sensor can be significantly reduced.

Publisher:

Հայաստանի ԳԱԱ

Format:

pdf

Identifier:

oai:arar.sci.am:167890

Call number:

АЖ 415

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան