Publication Details:
Լույս է տեսնում 1966 թվականից՝ տարին 4 անգամ։
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ՀՀ ԳԱԱ Տեղեկագիր: Ֆիզիկա = Proceedings of the NAS RA: Physics
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Additional Information:
Andreev V. V. , Bondarenko G. G., Andreev D. V., Stolyarov A. A.
Title:
Использование МДП-сенсоров радиационных излучений в режимах сильнополевой инжекции электронов
Other title:
Use of MIS Sensors of Radiation in High-Field Electron Injection Modes
Creator:
Андреев, В. В. ; Бондаренко, Г. Г. ; Андреев, Д. В. ; Столяров, А. А.
Contributor(s):
Պատ․ խմբ․՝ Գ․ Մ․ Ղարիբյան (1966-1992) ; Գլխ․ խմբ․՝ Վ․ Մ․ Հարությունյան (1993-2021) ; Կ․ Մ․ Ղամբարյան (2022-)
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Abstract:
A model is proposed that describes the change in the charge state of metal-insulatorsemiconductor (MIS) structures and sensors made from it’s under the conditions of the simultaneous effect of radiation ionization and high-field injection of electrons from a semiconductor. The proposed model takes into account the interaction of injected electrons with holes generated by radiation and high-field ionization and trapped at the interface of the SiO2 film with a semiconductor, as well as the generation of surface states during the annihilation of part of holes during their interaction with injected electrons. It is shown that the MIS sensor, where the high-field injection of electrons into the dielectric film takes place, can be used to control the intensity of radiation by determining the radiation ionization current from the time dependence of the voltage incident on the sensor using the proposed model. It has been established that in the high-field electron injection mode, a significant increase in the dose sensitivity of MIS sensors is possible, but at the same time, the operating time and dose range of the MIS sensor can be significantly reduced.