Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Date of publication:

2023

Volume:

16

Number:

1

ISSN:

1829-1171

Official URL:

Corporate Creators:

Laboratory of Energetic Engineering and Materials, Faculty of Sciences Ibn Tofail, Kenitra, Morocco. ; Physics department, Faculty of Sciences of Agadir, BP 8106, 80000 Agadir, Morocco. ; Laboratory of LSTIC, Physics Department, Faculty of Sciences, Chouaib Doukkali, El jadida, Morocco.

Coverage:

7-12

Abstract:

In this work, we study the behavior of resistivity as a function of temperature and for several samples of ZnSxSe1-x thin films with x = 0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0 respectively. In fact, we re-analyze in our investigation experimental measurements obtained by M. Popa et al. [1] in the range of temperature from 300 K to 500 K. We showed that the resistivity follows a nearest neighbor site hopping conduction mechanism with ��=���������� (����������) for very high temperatures and Mott variable range hopping conduction with ��=���������� (������)��/�� for relatively low temperatures. The crossover between the two regimes can be explained by the competition between the localization length scale ��������and the hopping length scale ��������.

Format:

pdf

Identifier:

click here to follow the link ; oai:arar.sci.am:359434

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան