Publication Details:
Journal or Publication Title:
Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես
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Creator:
Mounir, E. ; Mabchour, H. ; Ennajh, D. ; El oujdi, A. ; El kaaouachi, A. ; Ait Hammou, B. ; Echchelh, A. ; Dlimi, S.
Corporate Creators:
Laboratory of Energetic Engineering and Materials, Faculty of Sciences Ibn Tofail, Kenitra, Morocco. ; Physics department, Faculty of Sciences of Agadir, BP 8106, 80000 Agadir, Morocco. ; Laboratory of LSTIC, Physics Department, Faculty of Sciences, Chouaib Doukkali, El jadida, Morocco.
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Uncontrolled Keywords:
Variable Range Hopping ; localization length ; hopping length ; thin films
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Abstract:
In this work, we study the behavior of resistivity as a function of temperature and for several samples of ZnSxSe1-x thin films with x = 0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0 respectively. In fact, we re-analyze in our investigation experimental measurements obtained by M. Popa et al. [1] in the range of temperature from 300 K to 500 K. We showed that the resistivity follows a nearest neighbor site hopping conduction mechanism with ��=���������� (����������) for very high temperatures and Mott variable range hopping conduction with ��=���������� (������)��/�� for relatively low temperatures. The crossover between the two regimes can be explained by the competition between the localization length scale ��������and the hopping length scale ��������.