Հրապարակման մանրամասներ:

Established in 2008

Ամսագրի կամ հրապարակման վերնագիր:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Հրապարակման ամսաթիւ:

2009

Հատոր:

2

Համար:

2

ISSN:

1829-1171

Պաշտոնական URL:

Ծածկոյթ:

95-121

Ամփոփում:

Today the development of information and high technologies, transition from microelectronics to nanoelectronics, as well as the realization of newly proposed demands of the characteristics of semiconductor optoelectronic devices is mainly conditioned not only by the improvement of optical, photoelectrical and other properties of devices, but their elaboration as well, based on artificial semiconductors and multilayer heterostructures. Transition from microelectronic devices to the state-of-the-art nanoelectronic devices through epitaxial technologies from the point of view of research and industrial applications requires investigation of phenomena and regularities caused by the decrease of sizes. Conditioned by several atomic layers the influence of change of sizes on the characteristic parameters of semiconductor optoelectronic devices, such as tunnel junctions through quantum barriers and capture of charge carriers by quantum wells, can essentially change the density of states of the quasi-particles, the renormalization of forbidden band (as compared to bulk ones), the efficiency, threshold current, etc. of nanostructured devices. Thus, knowledge of optical, photoelectrical and other properties of low-dimensional systems, their nanoscale investigation, observation of new quantum effects in nanostructures, as well as the design, elaboration and investigation of them is actual.

Ստեղծման ամսաթիւը:

2009-06-12

Ձեւաչափ:

pdf

Նոյնացուցիչ:

oai:arar.sci.am:23230

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