Հրապարակման մանրամասներ:

Established in 2008

Ամսագրի կամ հրապարակման վերնագիր:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Հրապարակման ամսաթիւ:

2025

Հատոր:

18

Համար:

4

ISSN:

1829-1171

Պաշտոնական URL:

Ծածկոյթ:

53-58

Ամփոփում:

In this work, the increase in the concentration of free electrons (n) in InAs after high-temperature heating followed by isochronous annealing is calculated under the assumption that uncontrolled impurities are present in the single crystals in the form of small complexes. It is shown that these complexes dissociate during annealing into individual impurity ions, which diffuse into the lattice and become donor centers (thermal donors), thereby causing an increase in n. The average dissociation energy of the impurity complexes, ΔW, was determined, and the dependence of the concentration n on the annealing time τ was calculated within the framework of a model of closely spaced ion pairs, using experimental data obtained at fixed annealing temperatures of 450 °C, 650 °C, and 850 °C. It was established that the value of ΔW depends on the impurity concentration, the diffusion coefficient of the impurity ions, the annealing temperature, and the dielectric constant of InAs. Comparison between the calculated and experimental curves of the additional electron concentration Δn(τ) showed that Δn increases monotonically with both annealing temperature and duration. At an annealing temperature of 450 °C, the calculated and experimental Δn(τ) curves exhibit nearly complete agreement. However, at higher annealing temperatures, certain discrepancies appear: for short annealing times (τ < 60 h), the calculated Δn(τ) values lie below the experimental ones, whereas for τ > 60 h, the opposite tendency is observed. Furthermore, this discrepancy decreases as the annealing temperature increases. Probable causes of the observed features are discussed and corresponding conclusions are drawn.

Ձեւաչափ:

pdf

Նոյնացուցիչ:

կապին հետեւելուն համար սեղմէ հոս ; oai:arar.sci.am:426749

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